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| LAB SOT-227 Package Outline. Dimensions in mm (inches) 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) 4 .8 (0 .1 8 7 ) H= 4 .9 (0 .1 9 3 ) (4 places) 1 2 .6 (0 .4 9 6 ) 1 2 .8 (0 .5 0 4 ) 2 5 .2 (0 .9 9 2 ) 2 5 .4 (1 .0 0 0 ) 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) SEME BFC11 4TH GENERATION MOSFET Hex Nut M 4 (4 places) 1 R 2 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 ) 0 .7 5 (0 .0 3 0 ) 0 .8 5 (0 .0 3 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 4 3.3 (0 .1 2 9) 3.6 (0.14 3 ) 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 ) 3 5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 ) R= 4 .0 (0 .1 57 ) (2 P lac e s) VDSS ID(cont) RDS(on) * Source 2 may be omitted, shorted to Source 1 or used for Gate drive circuit. 800V 27A 0.30 Terminal 1 Source 2* Terminal 3 Gate Terminal 2 Terminal 4 Drain Source 1 ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSS ID IDM , ILM VGS PD TJ , TSTG TL Drain - Source Voltage Continuous Drain Current Pulsed Drain Current 1 and Inductive Current Clamped Gate - Source Voltage Total Power Dissipation @ Tcase = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature : 0.063" from Case for 10 Sec. 800 27 108 30 520 4.16 -55 to 150 300 V A A V W W / C C STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) Characteristic BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain - Source Breakdown Voltage On State Drain Current 2 Drain - Source On State Resistance 2 Zero Gate Voltage Drain Current (VGS = 0V) Gate - Source Leakage Current Gate Threshold Voltage Test Conditions VGS = 0V , ID = 250A VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS =10V , ID = 0.5 ID [Cont.] VDS = VDSS VDS = 0.8VDSS , TC = 125C VGS = 30V , VDS = 0V VDS = VGS , ID = 2.5mA 2 Min. 800 27 0.30 250 1000 100 4 Typ. Max. Unit V A A nA V 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94 LAB DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate - Source Charge Gate - Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 Min. Typ. 5780 725 240 245 28 113 14 14 48 12 Max. Unit 6800 1015 360 370 40 170 28 28 72 24 ns nC pF SEME BFC11 SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Characteristic Continuous Source Current (Body Diode) Pulsed Source Current1(Body Diode) Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge VGS = 0V , IS = - ID [Cont.] IS = - ID [Cont.] dls / dt = 100A/s 505 12 1010 23 Test Conditions Min. Typ. Max. Unit 27 A 108 1.8 1200 46 V ns C PACKAGE CHARACTERISTICS LD LS VIsolation CIsolation Torque Characteristic Internal Drain Inductance (Measured From Drain Terminal to Centre of Die) Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance f = 1MHz 2500 35 13 Min. Typ. 3 5 Max. Unit nH V pF in-lbs Maximum Torque for Device Mounting Screws and Electrical Terminations THERMAL CHARACTERISTICS RJC RCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% 3) See MIL-STD-750 Method 3471 Min. Typ. Max. Unit 0.24 C/W 0.05 CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94 |
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